MT53E1G32D2FW-046 WT:B vs MT53E2G32D4DE-046 WT:A 对比
详细并排对比 MT53E1G32D2FW-046 WT:B 出自 Micron Technology 和 MT53E2G32D4DE-046 WT:A 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E2G32D4DE-046 WT:A - 64Gb LPDDR4X SDRAM 2G×32 | Micron
MT53E2G32D4DE-046 WT:A ✓ 量产中规格对比
| 参数 | MT53E1G32D2FW-046 WT:B | MT53E2G32D4DE-046 WT:A |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $98.44 | $47.85 |
| 存储器类型 | Volatile, Mobile LPDDR4 SDRAM (LPDRAM) | Mobile LPDDR4X SDRAM (volatile) |
| Memory Capacity | 32 Gbit (4 GB) | — |
| 存储组织 | 1G x 32 | 2G × 32 bit |
| Interface / Bus Width | Parallel, 32-bit | — |
| Clock Frequency (max) | 2.133 GHz (2133 MHz) | — |
| Data Rate (per pin) | 4266 MT/s | — |
| Clock Access Time (tCK) | 3.5 ns | — |
| Speed Bin | -046 | — |
| Supply Voltage VDD2 | 1.1 V | — |
| Supply Voltage VDDQ | 1.1 V (LPDDR4X) / 1.8 V (LPDDR4) | — |
| 封装 | 200-ball TFBGA (10 mm x 14.5 mm) | 200-ball TFBGA (10 × 14.5 mm) |
| 工作温度 | -25C to +85C | -25 °C to +85 °C |
| 安装类型 | Surface Mount | Surface Mount |
| Die Configuration | Dual-Die Package (DDP) | — |
| On-Die Features | Auto precharge, Data mask, ZQ calibration, Write leveling, Built-in temperature sensor, Asynchronous reset | — |
| RoHS 状态 | Compliant | Compliant |
| Density | — | 64 Gbit |
| Speed Grade | — | -046 (2133 MHz tCK) |
| Clock Frequency | — | 2.133 GHz |
| Access Time (tCK) | — | 3.5 ns |
| 数据速率 | — | 4266 MT/s (DDR, dual-edge) |
| Supply Voltage (VDD1/VDD2/VDDQ) | — | 1.06 V to 1.17 V (VDDQ 0.6 V typical, HSUL_12) |
| 接口 | — | Parallel command/address; HSUL_12 data |
| Ball Pitch | — | 1.0 mm |
| Device Configuration | — | Dual-rank / dual-channel x32 |
| Write Cycle Time (typical) | — | 18 ns |
| MSL 等级 | — | MSL-3 (per JEDEC J-STD-020) |